German high-tech SME with focus on micro-engineering tools for processing semiconductors developed a novel high-energy ion implantation technology, based on energy filter for ion implantation (EFII), enable very precise, depth-distributed doping of any desired semiconductor material (e.g. SiC). Seeking companies from semiconductor sector and foundries using ion implantation or producing ion beam accelerators, for technical cooperation and commercial agreements with technical assistance.
Microelectronic power devices based on the semiconductor material silicon carbide (SiC) have superior properties compared to devices made of Silicon (Si). One of the key processes during the production of any SiC power device is the doping of the active epitaxial layer. Unfortunately, today’s microchip production cannot fully exploit the advantages of SiC, since the doping variance of the active layer is rather high (more than 10% doping variation for N (nitrogen) in SiC over a 6” wafer is common). This directly translates into negative device performance and higher chip cost. Until recently, no technical solutions to overcome this problem were known, that are scalable to production volume.
However, a German young high-tech company with focus on micro-engineering tools for processing semiconductors has recently developed a novel high-energy ion implantation technology. This technology is based on an energy filter for ion implantation (EFII), which allows for very precise, depth-distributed doping of any desired semiconductor material.
The EFII technology overcomes the mentioned problems in semiconductor processing in a scalable manner. It especially offers a highly-precise, flexible solution for the doping problem in SiC; less than 1% doping variation for N (nitrogen) in SiC over a 6” wafer. The technology is based on the transmission of accelerated ions through a micro-patterned thin silicon membrane, which is referred to as EFII. The EFII manipulates the energy distribution of the formerly monoenergetic ion beam into a continuous energy distribution, allowing for depth distributed, highly precise and (if needed) masked doping.
The next generation of MOSFETs (metal oxide semiconductor field-effect transistors) based on SiC will be so-called “SiC-Superjunction-MOSFETs”. The superjunction structure consists of alternating p- and n-type doped columns within the active device area. This column-like structures can only be manufactured with the EFII technology. The introduction of the superjunction (SJ) technology for SiC will dramatically reduce chip size and cost for these High-Voltage MOSFETs, while yield and performance increase. SiC-SJ-MOSFETs will reach a large market share as they outperform the conventional Si-IGBT technolgy for high voltages and switching frequencies. EFII is the enabling technology for SiC-SJ-MOSFETs.
The EFII technology is offered to semiconductor power device manufacturer which are in particular, but not exclusively dealing with silicon carbide (SiC) high-voltage diodes, MOSFETs and superjunction devices and also to SiC substrate suppliers. Furthermore EFII is offered to high-energy ion implantation foundries, ion beam accelerator manufacturers and end-station manufacturers. For all target groups technical cooperation agreements and/or commercial agreements with technical assistance are envisaged.
- Specific area of activity of the partner: Seeking companies from semiconductor sector (especially SiC based) and foundries using ion implantation or producing ion beam accelerators for technical cooperation and commercial agreements with technical assistance:
- Power device manufacturers: Interested customers and companies should test and use the novel ion implantation technology in own process steps for the production of microchips (e.g. SiC high-voltage diodes, MOSFETs and superjunction devices) with significantly improved efficiency
- Substrate suppliers: Interested customers can dope the epitaxial layers on their substrates with a high lateral doping homogeneity of <1% (e.g. for N or Al in SiC).
- High-energy ion implantation foundries, ion beam accelerator manufacturers and end-station manufacturers can implement the novel ion implantation technology for their customers.
• Any desired dopant-substrate-combination possible
• High lateral dopant homogeneity (<1%) over the wafer surface
• Highest doping precision
• Exact energy filter manufacturing with low surface roughness leads to exact profile shaping.
• For flexible adjustment of electrical features of SiC power devices
• By utilization of a multi-wafer-implanter high wafer throughput possible
• Only evident technology scalable to production volume
• Enables high-performance chip products which are not yet feasible (“SiC-Superjunction-MOSFET”)
• Enable more accurate and cost-efficient devices
• Improves significantly the cost and market position of customers
Already on the market